| PART |
Description |
Maker |
| PSMN4R5-40PS |
N-channel 40 V 4.6 mstandard level MOSFET
|
NXP Semiconductors
|
| BUK7K12-60E |
Dual N-channel 60 V, 9.3 mstandard level MOSFET
|
NXP Semiconductors
|
| BUK7K35-60E |
Dual N-channel 60 V, 30 mstandard level MOSFET
|
NXP Semiconductors
|
| PSMN016-100XS |
N-channel 100V 16 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| PSMN9R5-100XS |
N-channel 100V 9.6 mstandard level MOSFET in TO220F (SOT186A)
|
NXP Semiconductors
|
| PSMN2R6-60PS |
N-channel 60 V, 2.6 mstandard level MOSFET in SOT78
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
|
NXP Semiconductors
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
| HI3-0506A-5 HI3-0507A-5 HI3-0509A-5 HI3-506A HI3-5 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection
|
Intersil Corporation
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
|
