| PART |
Description |
Maker |
| HY57V643220DLT-55 HY57V643220DTP-45 HY57V643220DT- |
4Banks x 512K x 32bits Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IS42VM32800E |
2M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM32400F-75BLI |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solu...
|
| W9864G2JH |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
| W9864G2IH |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
| IS46LR32640A |
16M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| IS45SM32400H-6BLA1 |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS46LR32160C |
4M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
