| PART |
Description |
Maker |
| MRF6P9220HR3 |
880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF6S21060N |
2110鈥?170 MHz, 14 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AGR21125E AGR21125EF AGR21125EU |
125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| SKY77555 |
Tx-Rx FEM Based on CMOS PA for Dual-Band GSM / GPRS (880-915 MHz and 1710-1785 MHz)
|
Skyworks Solutions Inc.
|
| CHM2012U-FR90A |
880 MHz - 960 MHz RF TRANSFORMER
|
TOKO INC
|
| Q62703-Q1094 SFH486 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| PE3X20TF-FREQ-OUT7 |
CRYSTAL OSCILLATOR, CLOCK, 170 MHz - 650 MHz, PECL OUTPUT
|
PLETRONICS INC
|
| SM1145BDE-FREQ4 |
CRYSTAL OSCILLATOR, CLOCK, 120 MHz - 170 MHz, CMOS OUTPUT
|
PLETRONICS INC
|
