| PART |
Description |
Maker |
| MRF9200LR306 MRF9200LSR3 MRF9200LR3 |
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF9085 MRF9085LR3 MRF9085LSR3 |
128K 3.3 VOLT SERIAL CONFIGURATION PROM
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MRF9210 MRF9210R3 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| OIS-170880 OIS-170880-X-T |
Series 170 - 0805 Standard IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| B39171-B3804-U210 B3804 |
SAW Components Low-loss Filter 170,2 MHz
1 FUNCTIONS, 170.2 MHz, SAW FILTER
|
EPCOS[EPCOS]
EPCOS AG
|
| AGR21180EF |
180 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF210 |
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| MRF6S21100HR3 MRF6S21100HSR3 |
2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
Freescale Semiconductor, Inc
|
| SM1145JDS-FREQ-OUT21 SM1145JDV-FREQ-50-OUT21 |
CRYSTAL OSCILLATOR, CLOCK, 70 MHz - 170 MHz, CMOS OUTPUT
|
PLETRONICS INC
|
| PE2344BY-FREQ-OUT7 PE2345BV-FREQ-OUT7 PE2345BY-FRE |
CRYSTAL OSCILLATOR, CLOCK, 10 MHz - 170 MHz, PECL OUTPUT
|
PLETRONICS INC
|
