| PART |
Description |
Maker |
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
|
Advanced Semiconductor, Inc.
ASI
|
| 2N4440 SD1060 RF41 |
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C Si, RF SMALL SIGNAL TRANSISTOR, TO-60
RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C
From old datasheet system
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| MMBTH10-4LT1G MMBTH10LT3G |
VHF/UHF Transistor
|
Rectron Semiconductor
|
| BFQ31 |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| KTC2347 |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| KTC3195 |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| KTC3880S |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| KTC9011 |
RF/VHF/UHF Transistor
|
Korea Electronics (KEC)
|
| MS1261 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 15; P(in) (W): 1; Gain (dB): 12; Vcc (V): 12.5; Cob (pF): 45; fO (MHz): 0; Case Style: M122 UHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
Advanced Power Technology
|
