| PART |
Description |
Maker |
| HAF2014 |
Thermal MOS FETs
|
Hitachi Semiconductor
|
| 2SK0665 2SK665 |
Silicon MOS FETs
From old datasheet system
Small-signal device - Small-signal FETs - MOS FETs
|
Panasonic Semiconductor
|
| 2SK3064 |
Small-signal device - Small-signal FETs - MOS FETs
SMini3-G1
|
panasonic
|
| 2SK3044 |
Power F-MOS FETs
|
Matsshita / Panasonic
|
| 2SK3048 |
Power F-MOS FETs
|
Matsshita / Panasonic
|
| 2SK3030TENTATIVE |
Power F-MOS FETs
|
Matsshita / Panasonic
|
| 2SK3018 |
N-Channel Enhancement-Mode MOS FETs
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| MRF136 |
N-CHANNEL MOS BROADBAND RF POWER FETs
|
MOTOROLA[Motorola, Inc]
|
| GM2301 |
P-Channel Enhancement-Mode MOS FETs
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1109 BF1109R BF1109WR |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
