| PART |
Description |
Maker |
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| CXK77B1840AGB CXK77B3640AGB |
4Mb Late Write HSTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
|
Sony
|
| MCM69L818AZP9.5R MCM69L736A MCM69L736AZP10.5 MCM69 |
4M Late Write HSTL
|
MOTOROLA[Motorola, Inc]
|
| HM62G36256ABP-30 HM62G36256ABP-33 |
Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas
|
| GS8170LW36AC |
18Mb B>1x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 35.7x1Lp的CMOS的I / O后写SigmaRAM
|
GSI Technology, Inc.
|
| GS8150V18AB-250 GS8150V36AB-250 GS8150V36AGB-250 G |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8170DW72C-333I GS8170DW36C GS8170DW36C-200 GS817 |
18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| MT59L128V36PB-4.5 |
128K X 36 LATE-WRITE SRAM, 2.25 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Cardinal Components, Inc.
|
| K7Z327285M |
512Kx72-Bit DLW(Double Late Write) RAM Data Sheet
|
Samsung Electronic
|
| HM64YGB36100BP-33 HM64YGB36100 |
32M Synchronous Late Write Fast Static RAM (1-Mword 】 36-bit)
|
Renesas Electronics Corporation
|
| HM64YGB36100 HM64YGB36100BP-33 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
