| PART |
Description |
Maker |
| IRFZ24L IRFZ24NS IRFZ24NSTRR IRFZ24NSTRL IRFZ24NL |
(159.21 k) 59.21十一
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.07ohm，身份证\u003d 17A条）
55V,17A,N-Channel HEXFET Power MOSFET(55V,17A,N沟道 HEXFET功率MOS场效应管) 55V的，17A条，N沟道HEXFET功率MOSFET5V的，17A条，沟道的HEXFET功率马鞍山场效应管）
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFU024N IRFU024NPBF IRFR024N IRFR024NPBF IRFR024N |
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier
|
| STD17N05 STD17N06 STD17N05T4 STD17N06T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-252 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 17A条（丁）|52
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 17A I(D) | TO-252 晶体管| MOSFET的| N沟道| 50V五（巴西）直| 17A条（丁）|52
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
ON Semiconductor
STMICROELECTRONICS[STMicroelectronics]
|
| HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 15A条（丁）|52AA
15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STD18NF03L |
N-channel 30V - 0.038Ω - 17A - DPAK STripFET II Power MOSFET
N-channel 30V - 0.038ヘ - 17A - DPAK STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| IRFL4105 IRFL4105TR |
3.7 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| STB185N55F3 STP185N55F3 |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel 55V - 3.2m楼? - 120A - D2PAK/TO-220 STripFET垄芒 Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET?/a> Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET Power MOSFET
N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| IRFL014N |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管）
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF5NJZ48 |
55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*)
|
International Rectifier
|
| IRFZ44N IRFZ44 IRFZ44NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)
|
IRF[International Rectifier]
|
|
