Part Number Hot Search : 
EM73475 CP316V SHD12 0CB100 GB6NC60 IRL7833S 80CNQ035 HT9312D
Product Description
Full Text Search

GT60M303 - INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

GT60M303_5861910.PDF Datasheet

 
Part No. GT60M303
Description INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS

File Size 265.23K  /  6 Page  

Maker

TOSHIBA



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT60M303
Maker: TOSHIBA
Pack: TO-3PL
Stock: 3126
Unit price for :
    50: $3.44
  100: $3.27
1000: $3.10

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ GT60M303 Datasheet PDF Downlaod from Datasheet.HK ]
[GT60M303 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for GT60M303 ]

[ Price & Availability of GT60M303 by FindChips.com ]

 Full text search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS


 Related Part Number
PART Description Maker
IRG4PC50S IRG4PC50SPBF 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED GATE BIPOLAR TRANSISTOR
IRF[International Rectifier]
IRG4PC40FPBF IRG4PC40FPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
International Rectifier
IRG4PH40K 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRF[International Rectifier]
IRG4BC29K IRG4BC30K IRG4BC30 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
GT15Q311 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
IRGS4045DPBF IRGS4045DPDF IRGS4045DTRLPBF IRGS4045 INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
CM600HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
IRGP4069PBF INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
IRG4PSC71K-15 INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
MP6753 INSULATED GATE BIPOLAR TRANSISTOR
Toshiba Semiconductor
IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier
 
 Related keyword From Full Text Search System
GT60M303 Output GT60M303 Characteristic GT60M303 inductors GT60M303 microsemi GT60M303 wire
GT60M303 usb charger circuit GT60M303 Engine GT60M303 circuit board GT60M303 Test GT60M303 surface
 

 

Price & Availability of GT60M303

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.23442602157593