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K9K2G0816QU0M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet

K9K2G0816QU0M_5831908.PDF Datasheet
 Full text search : 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet

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K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
 SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- SSR H/S IO 230V 20A 4-32VDC
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256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
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 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
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 Samsung Electronic
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 Samsung Electronic
SAMSUNG[Samsung semiconductor]
UPD23C128040BLGY-XXX-MJH UPD23C128080BLGY-XXX-MJH 128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
 NEC
HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
256M; 133MHz LVTTL interface SDRAM
256M; 100MHz LVTTL interface SDRAM
 Elpida Memory
UPD46128512-E10X UPD46128512-E11X UPD46128512-E12X 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
 NEC, Corp.
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K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
 Samsung Electronic
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UPD45D128442G5-C75-9LG UPD45D128164G5-C75-9LG UPD4 128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAM
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