PART |
Description |
Maker |
C1812H122JGGACTU |
Ceramic, 200C, 200C-(CxxxxH), 1200 pF, 5%, 2,000 V, 1812, C0G, SMD, MLCC, High Temperature, Ultra-Stable, Low Loss
|
Kemet Corporation
|
SM2337 |
1200 VOLT ULTRA FAST RECOVERY RECTIFIER
|
MICROSEMI[Microsemi Corporation]
|
SDR1N SDR1A SDR1B SDR1D SDR1G SDR1J SDR1K SDR1M |
1 AMP ULTRA FAST RECOVERY RECTIFIER 50-1200 VOLTS
|
SSDI[Solid States Devices, Inc]
|
SDR9310 SDR9311 SDR9312 SDR937 SDR93761 SDR939 |
30 Amp ULTRA FAST RECTIFIER 700 - 1200 Volt 60 nsec
|
Solid States Devices, Inc
|
SDR1X |
(SDR1x) 1 AMP ULTRA FAST RECOVERY RECTIFIER 50-1200 VOLTS
|
SSDI
|
SDR4NSMS SDR4GSMS SDR4JSMS SDR4KSMS SDR4MSMS |
3 AMP 400-1200 VOLTS 50-80 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDR999P SDR9910N SDR9910P SDR9911N SDR9911P SDR991 |
50 AMP 800 -1200 Volts 80 nsec Ultra Fast Recovery Rectifier
|
SSDI[Solid States Devices, Inc]
|
FFB05U120S |
Ultra Fast Recovery Power Rectifer(平均整流电流30A超快恢复功率整流 5 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
|
Fairchild Semiconductor, Corp.
|
C0603C122J5GACTU |
Ceramic, Commercial-(CxxxxC), 1200 pF, 5%, 50 V, 0603, C0G, SMD, MLCC, Ultra-Stable, Low Loss, Class I
|
Kemet Corporation
|
CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
HLMP-UL07 HLMP-UL14 HLMP-UG06 HLMP-UH06 HLMP-DL08 |
T-13/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps T-1 - 3/4 (5 mm) Precision Optical Performance AlInGaP LED Lamps High-Speed Fully Differential Amplifier, /-5 V 8-MSOP-PowerPAD -40 to 85 High-Speed Fully Differential Amplifier, /-5 V 8-MSOP -40 to 85 Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SON -40 to 85 Super-Fast Ultra-Low Distortion High Speed Amplifier 8-SOIC -40 to 85 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-MSOP -40 to 85 Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP -40 to 85 Super-Fast Ultra-Low Distortion High Speed Amplifier 8-MSOP-PowerPAD -40 to 85 Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 470uF; Voltage: 35V; Case Size: 10x31.5 mm; Packaging: Bulk Super-Fast Ultra-Low Distortion High Speed Amplifier with Shutdown 8-SOIC -40 to 85
|
http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. Advanced Power Technology
|