| PART |
Description |
Maker |
| CR8AM |
MITSUBISHI SEMICONDUCTOR THYRISTOR
|
Renesas Electronics Corporation
|
| BCR08AM |
MITSUBISHI SEMICONDUCTOR
LOW POWER USE PLANAR PASSIVATION TYPE
|
RENESAS[Renesas Electronics Corporation]
|
| CR02 CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR02AM-8A CR2AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR16CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| MGF0911A 0911A |
From old datasheet system
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CR6CM CR6CM-8 |
CR6CM-8 CR6CM-12 Datasheet 104K/MAR.20.03 CR6CM - 8 CR6CM - 12数据104K/MAR.20.03
MITSUBISHI SEMICONDUCTOR THYRISTOR
|
Renesas Electronics Corporation
|
| AN80T05 |
Panasonic Semiconductor Singapore A Division of Panasonic Semiconductor Asia Pte Ltd
|
Panasonic Semiconductor
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
