| PART |
Description |
Maker |
| PSMN013-100ES |
N-channel 100V 13.9mOhm Standard Level MOSFET
|
NXP
|
| FDI3632 FDP3632 FDB3632 |
N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhm
N-Channel UltraFET Trench MOSFET 100V, 80A, 9m Ohm
|
Fairchild Semiconductor
|
| FDB8445 |
N-Channel PowerTrenchMOSFET 40V, 70A, 9mOhm
|
Fairchild Semiconductor Corporation
|
| FDU8580 |
N-Channel PowerTrench MOSFET 20V, 35A, 9mohm
|
Fairchild Semiconductor Corporation
|
| FDD8580 |
N-Channel PowerTrench MOSFET 20V, 35A, 9mohm
|
Fairchild Semiconductor Corporation
|
| FDS6679AZ |
P-Channel PowerTrench MOSFET -30V, -13A, 9mOhm
|
Fairchild Semiconductor Corporation
|
| FDS6679AZ |
P-Channel PowerTrench MOSFET -30V, -13A, 9mOhm 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDPF3860T |
100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ
N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FQI34P10 FQB34P10 FQB34P10TM |
From old datasheet system
100V P-Channel MOSFET
100V P-Channel QFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| IRF150 JANTXV2N6764 JANTX2N6764 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)
TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.055ohm/ Id= 38A)
|
IRF[International Rectifier]
|
| FQH70N10 |
100V N-Channel Q-FET
FQH70N10 100V N-Channel MOSFET
FQH70N10 100V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
