| PART |
Description |
Maker |
| IS61DDP2B42M36A/A1/A2 IS61DDP2B44M18A IS61DDP2B44M |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7J643682M07 K7J641882M |
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
| GS8662T09E-333 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| GS864032 GS864018 GS864036 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864118 GS864132 GS864136 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS8641Z18 GS8641Z32 GS8641Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
| GS864418 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864218 GS864236 GS8642272 |
72Mb Burst SRAMs
|
GSI Technology
|
| GS864272C-167V GS864272C-250IV GS864272C-200V GS86 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 8 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7.5 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 8 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA119
|
GSI Technology, Inc.
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
|
