| PART |
Description |
Maker |
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| SUV85N10-10 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
|
| SUM34N10-35 |
N-Channel 100-V (D-S) 175C MOSFET
N-Channel 100-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| FDMS86101 |
N-Channel PowerTrench垄莽 MOSFET 100 V, 49 A, 8 m搂?
N-Channel PowerTrench? MOSFET 100 V, 49 A, 8 m?
|
Fairchild Semiconductor
|
| FDP100N10 |
N-Channel PowerTrenchMOSFET 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench? MOSFET
|
Fairchild Semiconductor, Corp.
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| AP18P10GH AP18P10GJ |
12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
ADVANCED POWER ELECTRONICS CORP
Advanced Power Electronics Corp.
|
| IXFN100N10S1 IXFN100N10S3 IXFN100N10S2 |
HiPerFET Power MOSFETs with Schottky Diodes 100 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| ADL5802 ADL5802-EVALZ ADL5802ACPZ-R7 ADL580209 |
Dual Channel, High IP3, 100 MHz to 6 GHz Active Mixer
Dual Channel High IP3 100 MHz – 6 GHz Active Mixer; No of Pins: 24 100 MHz - 6000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
|
Analog Devices, Inc.
|
|
