| PART |
Description |
Maker |
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2SK1308H 2SD1317TX |
5 A, 400 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
4 A, 25 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC CORP
|
| QM400HA-H |
400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| BUX14 BUX14-JQR |
10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| CM400DY-12H |
Dual IGBTMOD 400 Amperes/600 Volts 400 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| ULB122 ULB122G-XX-TM3-T ULB122G-B6-TM3-T |
NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR
0.8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2SC4953 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 3 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic Industrial Solutions
PANASONIC[Panasonic Semiconductor]
|
| MJE13005F08 MJE13005F-O |
4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
TRIPLE DIFFUSED NPN TRANSISTOR
|
KEC(Korea Electronics)
|
| CENTRALSEMICONDUCTORCORP-CZTA44TR13 CZTA44BKLEADFR |
0.3 A, 400 V, NPN, Si, POWER TRANSISTOR
|
CENTRAL SEMICONDUCTOR CORP
|
| BUV47 |
9 A, 400 V, NPN, Si, POWER TRANSISTOR
|
BOURNS INC
|
|
