| PART |
Description |
Maker |
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB |
64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| PD42S65805 |
8,388,608 Words by 8 Bits CMOS dynamic RAMs(64M 动态RAM) 8388608位的CMOS400动态RAM动态存储器
|
NEC, Corp.
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| EDD2504AKTA-E EDD2504AKTA-6B-E EDD2504AKTA-7A-E ED |
256M bits DDR SDRAM (64M words x 4 bits)
|
ELPIDA[Elpida Memory]
|
| EDS6416AHTA-75-E EDS6416CHTA-75-E |
64M bits SDRAM (4M words x 16 bits)
|
Elpida Memory, Inc.
|
| TC58NS512ADC |
512 MBit CMOS NAND EPROM
|
Toshiba
|
| TC5816BDC |
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVT400FT-10 TC58FVT400FT TC58FVB400 TC58FVT400 |
4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
