| PART |
Description |
Maker |
| HTX4-600S |
NON INSULATED TYPE SENSITIVE GATE TRIACThe
|
SemiHow Co.,Ltd.
|
| HTU4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-251 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| T2322-D T2322B |
Sensitive gate Triac Silicon Bidirectional Thyristors(2.5A,200V敏感门三端双向可控硅晶闸
TRIAC 2.5A 200V
Sensitive Gate Triacs
|
ON Semiconductor
|
| MAC4DLM-D MAC4DLM-1G |
Sensitive Gate Triacs; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
Sensitive Gate Triacs Silicon Bidirectional Thyristors
|
ON Semiconductor
|
| MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
| C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V.
4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State
GESS[GE Solid State]
http://
|
| CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
|
Microchip Technology, Inc.
|
| MAC4DHM MAC4DHMT4 MAC4DHM-001 |
Sensitive Gate Triacs Silicon Bidirectional Thyristors
From old datasheet system
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
|
ONSEMI[ON Semiconductor]
|
| GT60M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
| S2060C S2061D |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V.
4A sensitive-gate silicon controlled rectifier. Vrsxm 500V.
|
General Electric Solid State
|
| 2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
