Part Number Hot Search : 
6501M TEA1066T 855728 S202D MAX3393E SC241 M3E13XQA TQ5132
Product Description
Full Text Search

HTM4A60S - INSULATED TYPE SENSITIVE GATE TRIAC (TO-126ML PACKAGE)

HTM4A60S_5732288.PDF Datasheet


 Full text search : INSULATED TYPE SENSITIVE GATE TRIAC (TO-126ML PACKAGE)
 Product Description search : INSULATED TYPE SENSITIVE GATE TRIAC (TO-126ML PACKAGE)


 Related Part Number
PART Description Maker
HTF4A60S NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-220F PACKAGE)
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
HTU4A60S NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-251 PACKAGE)
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
CM400HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
MCR106-6 MCR106-8 MCR106-D Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
Sensitive Gate Silicon Controlled Rectifiers
ON Semiconductor
MCR100-8G MCR100-4G MCR100-004G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
On Semiconductor
MCK100-6 400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage
Sensitive Gate Silicon Controlled Rectifiers
SemiWell Semiconductor
3N128 N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR
New Jersey Semi-Conductor Products, Inc.
STK14C68-C25 STK14C68-5S30 STK14C68-5S25 STK14C68- SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
NVRAM (EEPROM Based)
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):70A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础
Electronic Theatre Controls, Inc.
MAC4DHM MAC4DHMT4 MAC4DHM-001    Sensitive Gate Triacs Silicon Bidirectional Thyristors
From old datasheet system
Sensitive Gate Triacs Silicon Bidirectional Thyristors 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC
ONSEMI[ON Semiconductor]
CM600HA-5F HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
GT40M301 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS
TOSHIBA
2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 Thyristor .8A 100V
Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92
Silicon Controlled Rectifier .8A 25V
Thyristor .8A 200V
Thyristor .8A 50V
ONSEMI[ON Semiconductor]
 
 Related keyword From Full Text Search System
HTM4A60S prezzo baumer HTM4A60S Semiconductor HTM4A60S transient design HTM4A60S Protect HTM4A60S intersil
HTM4A60S Hex HTM4A60S asm encoder HTM4A60S cantherm HTM4A60S stmicroelectronics HTM4A60S texas
 

 

Price & Availability of HTM4A60S

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.2364270687103