PART |
Description |
Maker |
FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE 20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
FDA15N65 |
N-Channel UniFETTM MOSFET 650V, 16A, 440m 650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
5N65G-TA3-T 5N65L-TM3-T 5N65L-TF1-T |
5A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
5N65K |
5A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
4N65KL-TF3-T 4N65KG-TF3-T |
4A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
7N65L 7N65LL-TA3-T 7N65LL-TF2-T 7N65LL-TF3-T 7N65L |
7.4A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
7N65K |
7.4A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
4N65Z |
40A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
STP11NM60_07 STB11NM60 STB11NM60-1 STB11NM60T4 STP |
N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] 意法半导
|
ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7 Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7 Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7 Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220 Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8 Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
|