| PART |
Description |
Maker |
| DTC123JP |
Complementary Bias Resistor Transistors R1 = 2.2 kù, R2 = 47 kù
|
ON Semiconductor
|
| NSBC113EPDXV6T1G |
Complementary Bias Resistor Transistors
|
ON Semiconductor
|
| LMUN5237DW1T1G LMUN5211DW1T1 LMUN5211DW1T1G LMUN52 |
Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
LRC[Leshan Radio Company]
|
| NTE2356 NTE2355 |
Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors
|
NTE[NTE Electronics]
|
| EMC4DXV5T1G EMC3DXV5T1G EMC3DXV5T5G EMC2DXV5T1G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| MUN511 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5 |
From old datasheet system
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| AD8512ARMZ AD8510ARMZ-REEL AD8510BR AD8510ARZ AD85 |
Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier (Dual); No of Pins: 8; Temperature Range: Industrial DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8
Precision, Very Low Noise, Low Input Bias Current
|
Analog Devices, Inc.
|
| NSVMUN531335DW1T1G NSVMUN531335DW1T3G |
Complementary Bias Resistor Transistors
|
ON Semiconductor
|
| NSVMUN5312DW1T3G NSBC124EPDP6T5G NSBC124EPDXV6T1G |
Complementary Bias Resistor Transistors
|
ON Semiconductor
|
| EMC4DXV5T5G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
