| PART |
Description |
Maker |
| RHRP30120U |
30.0 Ampere SwitchMode Ultrafast Recovery Epitaxial Diode
|
Thinki Semiconductor Co., L...
|
| F30S60S |
30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode
|
Thinki Semiconductor Co...
|
| APT30D60BCA_05 APT30D60BCA APT30D60BCAG APT30D60BC |
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 30; VR (V): 600; trr (nsec): 25; VF (V): 1.6; Qrr (nC): 700; 27 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AD
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG |
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 1200; trr (nsec): 30; VF (V): 2.8; Qrr (nC): 2800; 60 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| APT2X101D40J APT2X100D40J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 100; VR (V): 400; trr (nsec): 37; VF (V): 1.3; Qrr (nC): 1050; 100 A, 400 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Microsemi Corporation
|
| APT30DQ120B APT30DQ120BG APT30DQ120S APT30DQ120SG |
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 30; VR (V): 1200; trr (nsec): 24; VF (V): 2.8; Qrr (nC): 1800; 1200 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo...
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MURS120T3 MURS120T3G MURS140T3 MURS140T3G MURS110T |
1A 400V Ultrafast Rectifier
1A 50V Ultrafast Rectifier
1A 100V Ultrafast Rectifier
1A 150V Ultrafast Rectifier
Surface Mount Ultrafast Power Rectifiers 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
Surface Mount Ultrafast Power Rectifiers 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA
|
ONSEMI[ON Semiconductor]
DOMINANT Opto Technologies Sdn. Bhd.
|
| FFPF30UA60S |
30A, 600V, Ultrafast Diode
30 A, 600 V, Ultrafast ll Diode
|
Fairchild Semiconductor
Diodes Incorporated
|
| BYQ30E BYQ30E-150 BYQ30E-200 BYQ30EB-150 BYQ30EB-2 |
Ultra low drop voltage regulators compatible with low ESR inhibit output capacitors 整流二极管超快。崎
Rectifier diodes ultrafast, rugged 8 A, 150 V, SILICON, RECTIFIER DIODE
Rectifier diodes ultrafast, rugged 8 A, 200 V, SILICON, RECTIFIER DIODE
SERVSELECT PS/2 30FT CPU CABLE
Rectifier diodes ultrafast, rugged(超快速、强化的整流器二极管)
Rectifier diodes ultrafast/ rugged
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| HFA08TB120 HFB08TB120 |
1200V 8A HEXFRED Discrete Diode in a TO-220AC package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode
|
IRF[International Rectifier]
|
