| PART |
Description |
Maker |
| NMA5109-B1M |
High Power Broadband Noise Sources 100 Hz to 500 MHz
|
Micronetics, Inc.
|
| NMA5250-A1M |
High Power Broadband Noise Sources 100 Hz to 1500 MHz
|
Micronetics, Inc.
|
| NMA5108-B1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
| NMA5110-A1M |
High Power Broadband Noise Sources 300 MHz to 1000 MHz
|
Micronetics, Inc.
|
| NMA5107-A1M |
High Power Broadband Noise Sources 100 Hz to 100 MHz
|
Micronetics, Inc.
|
| NMA5112-B1T |
High Power Broadband Noise Sources 10 MHz to 2000 MHz
|
Micronetics, Inc.
|
| MAX3524 MAX3524EVB |
Low-Noise, High-Linearity Broadband Amplifier
4.75 to 5.25 V, low-noise, high-linearity broadband amplifier
|
MAXIM - Dallas Semiconductor
|
| MAX3524EVB_ MAX3524 MAX3524EVB |
Low-Noise, High-Linearity Broadband Amplifier
|
Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
|
| BFP182R |
NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP183W Q62702-F1503 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
