PART |
Description |
Maker |
2SB1182 2SB1188 2SB822 2SB911M 2SB1240 A5800350 2S |
From old datasheet system Medium power Transistor(-32V/ -2A) Medium power Transistor(-32V, -2A) 中等功率晶体管(- 32V的,- 2A型)
|
Rohm Co., Ltd.
|
2SD166409 |
Medium Power Transistor (32V, 1A)
|
Rohm
|
2SB1237 2SA1515S 2SA1515S10 |
Medium Power Transistor (-32V,-1A)
|
Rohm
|
L2SD1781KRLT1G L2SD1781KLT1 L2SD1781KQLT1 L2SD1781 |
Medium Power Transistor(32V, 0.8A) 中等功率晶体管(32V的,0.8A
|
Leshan Radio Company, Ltd. LRC[Leshan Radio Company]
|
2SB118809 2SB1188 2SB1188T100Q |
Medium power transistor (-32V, -2A) Medium power transistor (32V, 2A) Medium power transistor (?2V, ?A)
|
Rohm Littelfuse
|
L2SD1781KQLT3G L2SD1781KQLT1G L2SD1781KQLT1G11 L2S |
Medium Power Transistor (32V, 0.8A) High current capacity in compact
|
Leshan Radio Company
|
2SB1237 2SA1515S 2SB1132 2SB1132_1 |
Medium Power Transistor (−32V,−1A)
|
ROHM[Rohm]
|
2DB1188P-13 2DB1188Q 2DB1188Q-13 2DB1188R 2DB1188R |
32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Diodes Incorporated
|
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T1G4004532-FLEVB1 T1G4004532-FL-15 |
45W, 32V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO 25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO 25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B 25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238 PNP PLASTIC POWER TRANSISTORS Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|