PART |
Description |
Maker |
K6F4008U1CFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
HY62KF08802B HY62KF08802B-DD HY62KF08802B-SD HY62K |
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM 1M × 82.73.6V的超低功耗FCMOS慢的SRAM 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM 1M × 8.73.6V的超低功耗FCMOS慢的SRAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K6F8016T6C K6F8016T6C-FF55 K6F8016T6C-FF70 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K6F8016R6BFAMILY |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
DSK6F8016U6B K6F8016U6 DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor] SAMSUNG [Samsung semiconductor] Samsung Electronic
|
AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF SWITCH Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36 Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I |
512K X 16 STANDARD SRAM, 100 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
KM68V1000B KM68V1000BL KM68V1000BL_L-L KM68V1000BL |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung semiconductor
|
AS6WA5128 |
3.0V to 3.6V 512K × 8 Intelliwatt low-power CMOS SRAM(3.0V 3.6V 512K × 8 Intelliwatt 低功CMOS 静态RAM) 3.0V to 3.6V 512K 】 8 Intelliwatt low-power CMOS SRAM 3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|