| PART |
Description |
Maker |
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
|
INFINEON[Infineon Technologies AG]
|
| APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
| APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
| SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
|
| APT10035B2LL APT10035LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 28A 0.350 Ohm
LED Lamp; Color:Red/Red; Leaded Process Compatible:Yes
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
http://
Advanced Power Technology Ltd.
|
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| APT10045JFLL |
POWER MOS 7 1000V 21A 0.450 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT20M16LFLL APT20M16B2FLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 100A 0.016 Ohm
|
Advanced Power Technology Ltd.
|
| APT20M16LLL APT20M16B2LL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
POWER MOS 7 200V 100A 0.016 Ohm
|
Advanced Power Technology Ltd.
|
