| PART |
Description |
Maker |
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| TSM3400CXRF |
High Density Cell Design for Ultra Low On-resistance
|
TY Semiconductor Co., Ltd
|
| KI4923DY |
TrenchFET Power MOSFETS Advanced High Cell Density Process
|
TY Semiconductor Co., Ltd
|
| LS26500 |
3.6 V Primary lithium-thionyl chloride High energy density C-size bobbin cell
|
saftbatteries
|
| WPM2026 WPM2026-3 WPM2026-3TR |
Single P-Channel, -20V, -3.2A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| QM3001K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| LS14500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
| LC4032B-10T44I LC4032V-10T48I LC4032V-10TN44I LC40 |
Super Fast High Density PLDs
|
Lattice Semiconductor
|
| STP4407 |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4480 |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
