| PART |
Description |
Maker |
| FQP7N65C FQPF7N65C |
650V N-Channel Advance Q-FET C-Series
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2N65K |
2A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2N65ZLG-TM3-T 2N65ZLG-TM3-R |
2A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 6N65L-TN3-R 6N65G-TN3-T 6N65L-TN3-T 6N65G-TM3-T 6N |
6.2A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| TSM7N6511 TSM7N65CIC0 |
650V N-Channel Power MOSFET
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
|
| 12N65G-T2Q-T 12N65G-TA3-T 12N65G-TF1-T 12N65L-T2Q- |
12A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 4N65Z |
40A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| 15N65L-TF2-T 15N65L-T47-T 15N65G-T47-T |
15A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 20N65G-T47-T 20N65L-T47-T |
20A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| STP11NM60_07 STB11NM60 STB11NM60-1 STB11NM60T4 STP |
N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
