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MBR10T10012 - High Performance Schottky Generation 5.0, 10 A

MBR10T10012_5497057.PDF Datasheet


 Full text search : High Performance Schottky Generation 5.0, 10 A
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Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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