| PART |
Description |
Maker |
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STP38N06 3645 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| NTE2905 |
P?Ch, Enhancement Mode High Speed Switch
|
NTE Electronics
|
| NTE491T |
N-Ch, Enhancement Mode High Speed Switch
|
NTE Electronics
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| NTE2397 |
MOSFET N-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2377 |
MOSFET N-Channel, Enhancement Mode, High Speed
|
NTE[NTE Electronics]
|
| NTE2371 |
MOSFET P-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| NTE2373 |
MOSFET P-Ch, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| STD20N06 |
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N-CHANNEL MOSFET
|
SamHop Microelectronics Corp.
STMicroelectronics
ST Microelectronics
|
| APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
