PART |
Description |
Maker |
IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDT04S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDD12SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDH04SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT06BS60C IDT06S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDC04S60C |
2nd generation thinQ SiC Schottky Diode 2nd generation thinQ! SiC Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
IDC06S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
IDV06S60C |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDV02S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|