| PART |
Description |
Maker |
| FGW40N120H |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW50N60VD |
Discrete IGBT (High-Speed V series) 600V / 50A
|
Fuji Electric
|
| FGW40N120VD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW40N120HD |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW75N60H |
Discrete IGBT (High-Speed V series) 600V / 75A
|
Fuji Electric
|
| FGW15N120H |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| SGR6N60UF SGR6N60UFTF SGR6N60UFTM |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
