PART |
Description |
Maker |
12N90 |
12A, 900V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
IRFBF20 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
|
IRF[International Rectifier]
|
FQPF9N90C FQP9N90C |
900V N-Channel Advance Q-FET C-Series 900V N-CHANNEL MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs 12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FQI3N90 FQB3N90 FQB3N90TM FQI3N90TU |
900V N-Channel MOSFET(漏源电压900V的N沟道增强型MOSFET) 900V N-Channel QFET
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
FQB2NA90 FQI2NA90 FQB2NA90TM FQI2NA90TU |
900V N-Channel QFET 900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
RFH12N40 RFH12N35 |
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs 12 A, 350 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC 12A/ 350V and 400V/ 0.380 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
7N90 7N90G-TF1-T 7N90L-TF1-T 7N901109 |
7A, 900V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
2N90G-TF3-T 2N90G-TM3-T 2N90G-TN3-T 2N90L-TN3-T 2N |
2A, 900V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|