| PART |
Description |
Maker |
| 1SS351-TB-E |
Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP
|
ON Semiconductor
|
| 5082-2277 |
SCHOTTKY BARRIER DUAL DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S-C BAND, MIXER DIODE
|
ASI
Advanced Semiconductor, Inc.
|
| KDR105 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| KDR331E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| NSR1020MW2T3G NSR1020MW2T1G |
Schottky Barrier Diode(肖特基势垒二极管) 1 A, 30 V, SILICON, SIGNAL DIODE
Schottky Barrier Diodes
|
ONSEMI[ON Semiconductor]
|
| KDR701S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR505S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| 5082-2300 1N5712 5082-2835 5082-2900 1N5711 5082-2 |
Schottky Barrier Diode for General Purpose Applications
Schottky Barrier Diodes for General Purpose Applications
Rectifier Diode, Schottky Diode, Single, 8V, Outline 15, 2-Pin
TV 53C 53#20 PIN PLUG RECP
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Agilent / Hewlett-Packard
|
| BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode
DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
