| PART |
Description |
Maker |
| RA13H1317M_06 RA13H1317M RA13H1317M-101 RA13H1317M |
RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA08N1317M10 RA08N1317M-101 |
135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| RA08H1317M10 |
135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA08H1317M_06 RA08H1317M RA08H1317M-101 RA08H1317M |
RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA13H8891MB10 |
880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA13H3340M_06 RA13H3340M RA13H3340M-101 RA13H3340M |
RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LB135DS01 |
135.42MHz Low-Loss SAWF 8MHz Bandwidth 135.42MHz低损耗声表面波滤波器带宽MHz
|
SIPAT Co., Ltd.
SIPAT Co,Ltd
|
| D1003UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1004 D1004UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端))
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D1028UK D1028 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
