| PART |
Description |
Maker |
| HMC232G806 |
GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC234C8 |
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz
|
Hittite Microwave Corporation
|
| HMC231G707 |
GaAs MMIC SMT HIGH ISOLATION SPST SWITCH, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC232G7 |
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH/ DC - 6.0 GHz
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 6.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC231G7 |
GaAs MMIC SMT HIGH ISOLATION SPST SWITCH, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC232C8 |
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH/ DC - 8.0 GHz
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz
|
Hittite Microwave Corporation
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC251MS810 |
GaAs MMIC SMT DIVIDE-BY-2, 3.0 - 6.5 GHz
|
Hittite Microwave Corporation
|
| HMC251MS801 |
GaAs MMIC SMT DIVIDE-BY-2, 3.0 - 6.5 GHz
|
Hittite Microwave Corporation
|
| HMC218MS8 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 6 GHz
|
Hittite Microwave Corpo...
|
| HMC219MS8-10 |
GaAs MMIC SMT DOUBLEBALANCED MIXER, 4.5 - 9 GHz
|
Hittite Microwave Corpo...
|
