| PART |
Description |
Maker |
| BFC15 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC17 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC19 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
| DPX-S435 |
4th Generation Intel Core Gaming platform
|
Advantech Co., Ltd.
|
| GT30J122 |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
Toshiba Corporation
Toshiba Semiconductor
|
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| R4-SXDP-20FR-R1 |
4th Generation Bearing ?MTBF of 160,000 hours thanks to highly durable POM components.
|
List of Unclassifed Man...
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| PS22056 PS2205612 |
Dual-In-Line Package Intelligent Power Module
1200V/25A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
