| PART |
Description |
Maker |
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 2643001501 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| 2661021801 |
Higher Frequencies 250-1000 MHz
|
Fair-Rite Products Corp.
|
| BAR17 |
RF switch RF attenuator for frequencies above 1 MHz Low distortion factor
|
TY Semiconductor Co., Ltd
|
| CA3127E CA3127F CA3127H |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz.
|
General Electric Solid State
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G27L-50BN BLF6G27LS-50BN |
50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor BLF6G27L-50BN<SOT1112A (CDFM6)|<<http://www.nxp.com/packages/SOT1112A.html<1<Always Pb-free,;BLF6G27L-50BN<SOT1112A (CDFM6)|<<http://www.nxp.com/packages/SOT1112A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| CLY5 Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| CS8129-D CS8129YTVA5 CS8129/D |
5V750mA Low Dropout LinearRegulator with Lower RESETbar Threshold
5V, 750mA Low Dropout Linear Regulator with Lower RESETbar Threshold
5.0 V, 750 mA Low Dropout Linear Regulator with Lower RESET Threshold
|
ON Semiconductor
|
