PART |
Description |
Maker |
STP240N10F7 |
N-channel 100 V, 2.5 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package
|
ST Microelectronics
|
STL66DN3LLH5 |
Dual N-channel 30 V, 5.9 mOhm typ., 20 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 double island package
|
ST Microelectronics
|
STH400N4F6-2 |
Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
STP190N55LF3 |
N-channel 55 V, 2.9 miliohm, 120 A, TO-220 N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
|
STMicroelectronics ST Microelectronics
|
STL8DN6LF3 |
Automotive-grade dual N-channel 60 V, 22.5 m typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package Automotive-grade dual N-channel 60 V, 22.5 mOhm typ., 7.8 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 double island package
|
STMicroelectronics ST Microelectronics
|
S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
SG200 MC07XSF517 |
Triple 7.0 mOhm and Dual 17 mOhm High-Side Switch
|
Freescale Semiconductor, Inc
|
2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
STP95N4F3 STB95N4F3 STD95N4F3 |
N-channel 40 V, 5.4 mOhm, 80 A, TO-220 STripFET(TM) III Power MOSFET N-channel 40 V, 5.0, 80 A STripFET III N-channel 40 V, 5.0 mOhm, 80 A, D2PAK STripFET(TM) III Power MOSFET
|
STMicroelectronics ST Microelectronics
|
10XS3435V10 |
Quad High Side Switch(Dual 10 mOhm, Dual 35 mOhm)
|
Freescale Semiconductor, Inc
|