| PART |
Description |
Maker |
| FDB2572 FDP2572 FDB2572NL |
N-Channel PowerTrench MOSFET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m蟹
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5Y3315CM |
150V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 150V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.085ohm, Id=18A*)
|
IRF[International Rectifier]
|
| FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 20A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 3A条（丁）| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
| FDI2532 FDP2532 FDB2532 FDP2532NL |
N-Channel PowerTrench MOSFET 150V, 79A, 16m?/a>
150V Channel UltraFET Trench MOSFET
N-Channel PowerTrench MOSFET 150V, 79A, 16mOhm
N-Channel PowerTrench MOSFET 150V, 79A, 16mз
N-Channel PowerTrench MOSFET 150V/ 79A/ 16m
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFB23N15 IRFSL23N15D IRFB23N15DPBF IRFS23N15D |
Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier
|
| FQU5N15 FQD5N15 FQD5N15TF FQD5N15TM |
150V N-Channel QFET
150V N-Channel MOSFET 4.3 A, 150 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF5N3415 IRF5N3415-15 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.042ohm, Id=37.5A)
SURFACE MOUNT (SMD-1) 150V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.042ohm/ Id=37.5A)
|
IRF[International Rectifier]
|
| IRFPS3815 |
150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)
|
IRF[International Rectifier]
|
| FDMS2572 FDMS257207 |
N-Channel UltraFET Trench? MOSFET 150V, 27A, 47m
N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDD2582 FDD2582NL |
N-Channel PowerTrench MOSFET 150V, 21A, 0.066 Ohm 3.7 A, 150 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel PowerTrench MOSFET 150V, 21A, 66m
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| FDA79N15NL |
150V N-Channel MOSFET 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
