| PART |
Description |
Maker |
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
| SPA-1526Z SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z- |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
|
RF Micro Devices
http://
|
| MAX2720-BMAX2721 MAX2720 MAX2720EUP MAX2720-MAX272 |
1.7GHz to 2.5GHz Direct I/Q Modulator with VGA and PA Driver
Direct QPSK Modulator with VGA and PA Driver for 1.7GHz to 2.5GHz Applications
1.7GHz to 2.5GHz, Direct I/Q Modulator with VGA and PA Driver
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| MAX2021ETX MAX2021ETXT MAX202113 |
High-Dynamic-Range, Direct Up-/Downconversion 650MHz to 1200MHz Quadrature Mod/Demod
|
Maxim Integrated Products
|
| 26PCCFA6D 26PCBFA6D 26PCDFA6D 26PCAFA6D 26PCAFA6G |
DRUCKSENSORR 0 5 PSID
10O, Quad, SPST, CMOS Analog Switches
Direct QPSK Modulator with VGA and PA Driver for 1.7GHz to 2.5GHz Applications
Evaluation Kit for the MAX2720, MAX2721
Evaluation Kit for the MAX2900, MAX2901, MAX2902, MAX2903, MAX2904
DRUCKSENSOR 0 15 PSID DRUCKSENSOR 0 15 PSID
|
RF Micro Devices, Inc.
|
| 366YYD 204YYD 526YYD 333HD/T2 333PYD/T2 333HD/HV5 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
Complete, Direct-Conversion Tuner for DVB-S2 Applications
DBS Direct Downconverter
Direct-Conversion Tuner ICs for Digital DBS Applications
Optoelectronic 光电
|
Newhaven Display International, Inc.
Air Cost Control
|
| LT5522EUF LT5522EUFTR |
600MHz to 2.7GHz High Signal Level Downconverting Mixer; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 125°C TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16
400MHz to 2.7GHz High Signal Level Downconverting Mixer
|
Linear Technology, Corp.
|
| 05738 05738-2 |
HEATSINK CROSSFLOW, MINI MOD (40 HG, SLOTTED) 散热器横流，迷你国防部（40汞，开槽）
HEATSINK CROSSFLOW MINI MOD (40 HG SLOTTED)
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 2-103414-0 1-103414-0 6-103414-0 1-103414-1 6-1034 |
ASSEMBLY, MOD II, HEADER, SINGLE ROW .100 C/L, (4) SIDED SHROUD
ASSEMBLY, MOD II, HEADER, SINGLE ROW .100 C/L, (4) SIDED SHRUD
|
Tyco Electronics
|
