| PART |
Description |
Maker |
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| M470L3224BT0 M470L3224BTO |
32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 Data Sheet
256MB DDR SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM
200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| MR18R16224/8/GAF0 |
(16Mx16)*2(4/8/16)pcs RIMMModule based on 256Mb A-die Data Sheet
|
Samsung Electronic
|
| HY5DU561622FTP-4I HY5DU561622FTP-5I HY5DU561622FLT |
256M(16Mx16) DDR SDRAM
|
Hynix Semiconductor
|
| K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
|
| HY5V56BF HY5V56BL/SF-HI HY5V56BL/SF-SI |
SDRAM - 256Mb
16Mx16|3.3V|8K|H|SDR SDRAM - 256M
|
Hynix Semiconductor
|
| M470L1624BT0 |
16Mx64 200pin DDR SDRAM SODIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
| M368L3223CTL |
32Mx64 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| M381L3223CTL |
32Mx72 DDR SDRAM 184pin DIMM based on 32Mx8 Data Sheet
|
Samsung Electronic
|
| HDD32M64F8 HDD32M64F8-13A HDD32M64F8-13B HDD32M64F |
DDR SDRAM Module 256Mbyte (32Mx64bit), based on 32Mx8, 4Banks, 8K Ref., SMM,
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
| HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM
64M X 4 DDR DRAM, PBGA60
16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
