| PART |
Description |
Maker |
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| TX2-5V TX2-12V TX2-3V TX2-L-1.5V TX2-48V TX2-L2-H- |
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE 2阿继电器容量高浪涌电
RELAY, SOLID STATE 40A 240VAC
FILM/M CAPACITANCE=0.1 VOLT=63
2 A CAPACITY RELAY WITH HIGH SURGE VOLTAGE & HIGH BREAKDOWN VOLTAGE
|
Nais(Matsushita Electric Wo...
Panasonic, Corp.
YEONHO Electronics Co., Ltd.
NAIS[Nais(Matsushita Electric Works)]
http://
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SC4635LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching Applications
1500V/20mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| BF393 BF393_D ON0206 |
High Voltage Transistors(NPN)
From old datasheet system
CASE 29-4, STYLE 1 TO-2 (TO-26AA)
HIGH VOLTAGE TRANSISTOR(NPN SILICON)
High Voltage Transistor(NPN)
|
Motorola Inc
ON Semiconductor
Motorola, Inc
|
| 2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
| 2SA1831 0165 |
PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
|
Sanyo
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| CSC2611 |
1.250W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 30 - 200 hFE.
HIGH VOLTAGE AMPLIFIER AND TV VIDEO OUTPUT
|
Continental Device India Limited
|
