| PART |
Description |
Maker |
| GP10M GP10A GP10B GP10D GP10G GP10J GP10K |
1.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts
Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 16V; Case Size: 10x9 mm; Packaging: Bulk
Glass Passivated Junction Rectifiers 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 1N4007G 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N |
(1N4001G - 1N4007G) GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
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http://
RECTRON[Rectron Semiconductor]
|
| 1N6480 1N6481 1N6482 1N6484 1N6483 |
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 200V
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 400V
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 600V
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 1000V
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 800V
|
Vishay
|
| 1N4002G 1N4007G 1N4001G 1N4003G 1N4004G 1N4005G 1N |
400V, 1.0A glass passivated rectifier
1000V, 1.0A glass passivated rectifier
50V, 1.0A glass passivated rectifier
200V, 1.0A glass passivated rectifier
100V, 1.0A glass passivated rectifier
600V, 1.0A glass passivated rectifier
800V, 1.0A glass passivated rectifier
|
http://
WTE[Won-Top Electronics]
|
| RGL41M RGL41A RGL41B RGL41G RGL41J RGL41D BYM11-50 |
Surface Mount Glass Passivated Junction Rectifier(表贴型钝化玻璃结型整流器)
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
|
GE Security, Inc.
GE[General Semiconductor]
|
| LMR1D LMR1K LMR1A LMR1M LMR1B LMR1J LMR1G |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
| GRN305 |
GLASS PASSIVATED JUNCTION
|
EIC discrete Semiconductors
|
