| PART |
Description |
Maker |
| SKW20N60HS SKW20N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http://
Infineon Technologies AG
|
| SKW30N60HS SKW30N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SIGC42T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling
|
Infineon Technologies AG
|
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| SKW15N60 SKB15N60 SKP15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-Technology with An...
|
INFINEON[Infineon Technologies AG]
|
| HGTG18N120BN FN4518 |
54 A, 1200 V, N-CHANNEL IGBT, TO-247
CAT6A RISER, YELLOW, SPOOBULK CABLE
From old datasheet system
54A, 1200V, NPT Series N-Channel IGBT
54A/ 1200V/ NPT Series N-Channel IGBT
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| FGA25N120ANTDTU |
1200V, 25A, NPT Trench IGBT
1200 V, 25 A NPT Trench IGBT
|
Fairchild Semiconductor
|
| APT20GN60SG APT20GN60BG |
NPT IGBT & Trench IGBT
IGBT w/ anti-parallel diode
|
Microsemi
|
