PART |
Description |
Maker |
BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS) Triacs Silicon Bidirectional Thyristors 600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS) 600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
JM38510 AD532J AD532JCHIP AD532JD AD532JH AD532K A |
Internally Trimmed Integrated Circuit Multiplier 16-bit 40MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 IC-MONOLITHIC MULTIPIER Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, CDIP14 Internally Trimmed Integrated Circuit Multiplier ANALOG MULTIPLIER OR DIVIDER, 1 MHz BAND WIDTH, MBCY10
|
AD[Analog Devices] Analog Devices, Inc.
|
MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MC1436CD MC1436CP1 MC1436D MC1436P1 MC1436_D ON088 |
High Voltage / Internally Compensated Operational Amplifiers From old datasheet system High Voltage Internally Compensated Operational Amplifiers High Voltage, Internally Compensated Operational Amplifiers
|
MOTOROLA[Motorola Inc] ON Semi Motorola, Inc
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFK38V2732 K382732 |
From old datasheet system 12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET 12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET From old datasheet system 14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC39V4450A C394450A |
From old datasheet system 4.4~5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
STGP10NB37LZ |
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED POWERMESH IGBT N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh IGBT N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh⑩ IGBT
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
FLM4450-45F |
C-Band Internally Matched FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|