| PART |
Description |
Maker |
| IDT7M4017S45CB IDT7M4017S50C |
x32 SRAM Module
|
|
| PDM4M6125S33M |
x32 SRAM Module X32号的SRAM模块
|
|
| CYM1841APZ-55C CYM1841P7-20C CYM1841PM-30C |
x32 SRAM Module X32号的SRAM模块
|
L-com, Inc.
|
| AK632256Z-45 AK632256Z-25 AK632256W-45 AK632256W-2 |
x32 SRAM Module X32号的SRAM模块
|
Glenair, Inc.
|
| CYM1838LHG-30C CYM1838LHG-25MB CYM1838LHG-35MB CYM |
x32 SRAM Module X32号的SRAM模块
|
Samsung Semiconductor Co., Ltd.
|
| IDT71V433S11PFI |
x32 Fast Synchronous SRAM 32K X 32 CACHE SRAM, 11 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A40360 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时57055555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时57205555ns 128Kx32 SRAM的模块（低功耗的CMOS28Kx32静态内存模块（存取时间15,17,20,25,35,45,55纳秒））
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation
TE Connectivity, Ltd.
|
| K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 D |
2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16K Nonovolatile SRAM
From old datasheet system
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
http://
|
| K7A403600B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
