| PART |
Description |
Maker |
| D72FY4D2 D64DV7 |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | TO-252AA
TRANSISTOR | BJT | DARLINGTON | NPN | 500V V(BR)CEO | 50A I(C) | TO-3 晶体管|晶体管|达林顿|叩| 500V五（巴西）总裁| 50A条一（c）|
|
Solid State Devices, Inc.
|
| KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
|
CERAMATE TECHNOLOGY CO., Ltd.
|
| ECG191 ECG189 ECG172A ECG179 ECG193 ECG184 |
Fan Screen kits; Material: Stainless steel wire mesh; Adaptation Machine: For both AC SAN ACE and AC New SAN ACE (except for models with an alarm
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-202VAR
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 300MA I(C) | TO-92 晶体管|晶体管|达林顿|叩| 40V的五（巴西）总裁| 300mA的一（c）|2
TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 25A I(C) | TO-3 晶体管|晶体管|进步党| 90V的五（巴西）总裁|5A一（c）|
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|进步党| 70V的五（巴西）总裁| 1A条一（c）|2VAR
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-126
|
DB Lectro, Inc.
SIEMENS AG
|
| 2SC1881K |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
| 2SD1630 2SD1630L |
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 70V的五（巴西）总裁| 1A条一（c）|26
NPN SILICON DARLINGTON POWER TRANSISTOR
|
NEC
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SD986 2SD985 2SD986L |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 1.5AI（丙）|26
NPN SILICON DARLINGTON POWER TRANSISTORS
|
NEC[NEC]
|
| 2N6649E3 2N6648E3 |
BJT( BiPolar Junction Transistor)
Darlington Transistors
|
Microsemi
|
| CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五（巴西）总裁|37
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
| SLA4031 SLA4010 |
Independent BJT Power Module
Darlington BJT Array
From old datasheet system
|
Sanken
|
