| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| EGN21A090IV |
High Voltage - High Power GaN-HEMT
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| ESN35A030MK EGN35A030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN030MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| EGN21A045I EGN21A045IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H40045 CG2H40045F CG2H40045P |
45 W, DC - 4 GHz RF Power GaN HEMT
|
Cree, Inc
|
| CLF1G0060S-10 CLF1G0060-10 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| TGF2955 |
40 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
