| PART |
Description |
Maker |
| 2SC3030 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING
|
FUJI[Fuji Electric]
|
| GD511 |
SURFACE MOUNT,SWITCHING DIODE
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time
|
GTM CORPORATION
E-Tech Electronics LTD
|
| AP30G100W-14 |
High speed switching
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electron...
|
| 2SJ506 2SJ506L 2SJ506S |
Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET
|
Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IKW40N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| RJL6018DPK RJL6018DPK-15 RJL6018DPK-00T0 RJL6018DP |
600V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2001LD-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 1SS119 |
Silicon Epitaxial Planar Diode for High Speed Switching
|
Hitachi Semiconductor
|
