| PART |
Description |
Maker |
| FS50SMJ-06 FS50SM-06 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
Powerex Power Semicondu...
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
Siemens Semiconductor G...
|
| GD511 |
SURFACE MOUNT,SWITCHING DIODE
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time
|
GTM CORPORATION
E-Tech Electronics LTD
|
| AP30G100W-14 |
High speed switching
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electron...
|
| 2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
| 2SJ506 2SJ506L 2SJ506S |
Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET
|
Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
|
| RJL6015DPK-15 |
600V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK1525DPS-00-T2 RJK1525DPS10 RJK1525DPS |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ189 2SJ189TP-FA |
Very High-Speed Switching Applications
4 A, 30 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| DB2U30800L |
For high speed switching circuits DB27308 in USSMini2 type package
|
Panasonic Semiconductor
|
| H7N0307AB-E H7N0307AB05 H7N0307AB |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2005DL-15 |
200V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
