| PART |
Description |
Maker |
| SB260E-G SB260ET-G SB250EB-G SB250ET-G SB250EA-G |
ESD Leaded Schottky Barrier Rectifiers
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=60V, V<sub>R</sub>=60V, I<sub>O</sub>=2A
|
Comchip Technology
|
| CDBFN140-G CDBFN160-G |
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=1A
Schottky Barrier Rectifiers Diodes, V-RRM=60V, V-R=60V, I-O=1A
|
Comchip Technology
|
| FMW-2204 FMW-24H FMW-24L MPE-24H AW04 AE04 SFPE-64 |
From old datasheet system
Schottky Barrier Diodes 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
Schottky Barrier Diodes 2 A, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes 1 A, SILICON, SIGNAL DIODE
|
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
http://
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| CDBMHT1100-HF CDBMHT140-HF CDBMHT1150-HF CDBMHT160 |
Halogen Free Schottky Barrier Diodes, V-RRM=100V, V-R=100V, I-O=1A
Halogen Free Schottky Barrier Diodes, V-RRM=40V, V-R=40V, I-O=1A
Halogen Free Schottky Barrier Diodes, V-RRM=150V, V-R=150V, I-O=1A
Halogen Free Schottky Barrier Diodes, V-RRM=60V, V-R=60V, I-O=1A
|
Comchip Technology
|
| BAS40- Q62702-D339 BAS40 BAS40-04 BAS40-05 Q62702- |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MA2J728 MA728 |
Schottky Barrier Diodes (SBD)
Silicon Epitaxial Planar Type Schottky Barrier Diodes
From old datasheet system
|
Matsshita / Panasonic
Mitsubishi
|
| MMBD301L MMBD301LT1 MBD301 |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
|
LRC[Leshan Radio Company]
|
| LMBD301LT1 |
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
|
LRC[Leshan Radio Company]
|
| MA2ZD18 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Silicon epitaxial planar type
|
Panasonic Semiconductor
|
