| PART |
Description |
Maker |
| SP4-2512/883 SP2-2512/883 SP4-2510-2 SP3-2512-2 SP |
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20 CERAMIC, LCC-20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8 METAL CAN-8
OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP8
|
Ecliptek, Corp.
|
| ZFSC-2-10G ZFSC-2-10G1 |
Power Splitter/Combiner 2 Way-0掳 50惟 2000 to 10000 MHz
Power Splitter/Combiner 2 Way-0 50惟 2000 to 10000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 2000 to 10000 MHz
Power Splitter/Combiner 2 Way-0° 50Ω 2000 to 10000 MHz
|
Mini-Circuits
|
| LT1206CT7 LT1206_07 LT1206 LT1206CN8 LT1206CR LT12 |
250mA/60MHz Current Feedback Amplifi er OP-AMP, 10000 uV OFFSET-MAX, 60 MHz BAND WIDTH, PZFM7
250mA/60MHz Current Feedback Amplifier; Package: DD PAK; No of Pins: 7; Temperature Range: 0°C to 70°C OP-AMP, 10000 uV OFFSET-MAX, 60 MHz BAND WIDTH, PSSO7
|
Linear Technology, Corp.
LINER[Linear Technology]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| HFA1135ML/883 |
OP-AMP, 10000 uV OFFSET-MAX, CQCC20
|
HARRIS SEMICONDUCTOR
|
| HMC611LP4E HMC611LP4 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
HITTITE[Hittite Microwave Corporation]
|
| HMC611 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
Hittite Microwave Corporation
|
| SDS0402BL-103M-S |
1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, SMD
|
YAGEO CORP
|
| 3549S-1AC-103B 3549H-1BD-103B |
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, WIRE WOUND, 10 TURN(S), 2 W, 10000 ohm
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, HYBRID, 10 TURN(S), 2 W, 10000 ohm
|
Bourns, Inc.
|
| 715C10KTD8010KVDC8000PF/-20N4700 |
CAPACITOR, CERAMIC, 10000 V, N4700, 0.008 uF, CHASSIS MOUNT
|
Vishay Intertechnology, Inc.
|
| T7YB103MB40 |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10000 ohm ROHS COMPLIANT
|
Vishay Intertechnology, Inc.
|
|
